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Buffered Oxide Etch (BOE) – NH₄F/HF

Electronics‑grade • Restricted (HF)

Electronics‑grade Etchants Hazard Restricted
BOE (NH₄F/HF) For SiO₂ wet etch Commercial ratios: 6:1 • 7:1 • 10:1 Materials: SiO₂, PSG/BPSG (per program) Do not provide to individuals
Components
NH₄F (buffer) / HF (etchant)
Form
aqueous solution
Appearance
clear, colorless
Hazard
HF‑containing • corrosive • toxic
Use
semiconductor wet etch of SiO₂
Supplied as sealed, pre‑mixed solutions for cleanroom use. No mixing instructions are provided. Always consult the SDS and your site SOPs before handling.
Commercial designation Description Notes
BOE 6:1 Buffered oxide etch; stronger etch within BOE range For faster SiO₂ removal; verify etch rate per process
BOE 7:1 Balanced removal/uniformity Common in general oxide patterning/clean
BOE 10:1 Milder etch within BOE range Higher selectivity vs certain masks; verify locally

Exact composition and etch rates are supplier‑ and lot‑specific and depend on temperature, agitation, oxide quality, and loading. We provide COA per lot; qualify in your line.

Information provided is for product selection only and is not a substitute for your process qualification or safety documentation. SDS and COA are available to approved customers.

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